Photoluminescence from laser assisted debonded epitaxial GaN and ZnO films
- 3 May 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (18) , 2678-2680
- https://doi.org/10.1063/1.123934
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Damage-free separation of GaN thin films from sapphire substratesApplied Physics Letters, 1998
- Optical absorption edge of ZnO thin films: The effect of substrateJournal of Applied Physics, 1997
- Optical Process for Liftoff of Group III-Nitride FilmsPhysica Status Solidi (a), 1997
- Thermal Expansion of GaN Bulk Crystals and Homoepitaxial LayersActa Physica Polonica A, 1996
- Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetryPhysical Review B, 1995
- Epitaxial Aluminum‐Doped Zinc Oxide Thin Films on Sapphire: I, Effect of Substrate OrientationJournal of the American Ceramic Society, 1995