Mechanisms of band bending at CsOx/GaAs(110) interfaces: Influence of overlayer stoichiometry and interfacial reactivity
- 1 July 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (4) , 986-990
- https://doi.org/10.1116/1.584591
Abstract
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