Mechanism of hot electron induced degradation in LDD NMOS-FET

• 1 January 1984
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1984.190844

Abstract

Keywords

• VOLTAGE
• HOT CARRIERS
• DEGRADATION
• SEMICONDUCTOR DEVICES
• VERY LARGE SCALE INTEGRATION
• STRESS
• SURFACE RESISTANCE
• TESTING
• ELECTRONS
• 2 DIMENSIONAL