Characterization of polycrystalline silicon contacts by photoconductance measurements
- 15 February 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (4) , 1953-1956
- https://doi.org/10.1063/1.345573
Abstract
The confinement of minority carriers by polycrystalline silicon (polysilicon) contacts has been studied using the photoconductivity technique. Steady-state and transient optical measurements show a dramatic increase of stored carriers by these contacts. From a thermionic-diffusion model, a barrier height of 130 meV for the polysilicon/silicon contact has been extracted.link_to_subscribed_fulltexThis publication has 6 references indexed in Scilit:
- A general model for minority carrier transport in polysilicon emittersSolid-State Electronics, 1989
- Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistorsIEEE Transactions on Electron Devices, 1986
- Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometryJournal of Applied Physics, 1985
- Experimental study of the minority-carrier transport at the polysilicon—monosilicon interfaceIEEE Transactions on Electron Devices, 1985
- Contact and bulk effects in intrinsic photoconductive infrared detectorsInfrared Physics, 1981
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980