Submicron GaAs microwave FET's with low parasitic gate and source resistances
- 1 February 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (2) , 42-44
- https://doi.org/10.1109/edl.1983.25640
Abstract
The substantial reduction in gate metallization resistance and improvement in performance of submicron-gate GaAs FET's has been achieved by employing a mushroom profile defined by electron-beam exposure. Using MBE growth of buffer, channel, and n+ contact layers, minimum noise figures of 1.0-1.1 dB have been demonstrated at 8 GHz, with associated gains of 13-14 dB.Keywords
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