(In,Ga)P alloys: photoluminescence excitation and cathodoluminescence of zinc doped indirect gap alloys
- 1 February 1970
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 3 (2) , L55-L57
- https://doi.org/10.1088/0022-3719/3/2/006
Abstract
Photoluminescence excitation and cathodoluminescence on a series of zinc doped alloys in the composition range 56-100 mole % GaP are in agreement with previous absorption measurements which indicate that the cross over composition from direct to indirect band gap is 60(+or-5) mole % GaP.Keywords
This publication has 2 references indexed in Scilit:
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968
- Infra‐Red and Visible Photoluminescence in In1−xGaxPPhysica Status Solidi (b), 1968