High-field measurements of anisotropy of H c2 and effect on grain-boundary flux pinning in V3Si
- 15 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (2) , 122-123
- https://doi.org/10.1063/1.89943
Abstract
Measurements of the anisotropy δ (T) = (Hc2[100]−Hc2[110])/H̄c2 of single‐crystal V3Si are presented which show that δ (T) is small and essentially temperature independent for a variety of crystals with residual resistance ratios from 17 to 60. The effects of δ on flux pinning in V3Si is much smaller than estimated earlier.Keywords
This publication has 4 references indexed in Scilit:
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