Photoluminescence studies of excitonic transitions in GaN epitaxial layers

This publication has 101 references indexed in Scilit:

• Temperature-dependent absorption measurements of excitons in GaN epilayers
  Applied Physics Letters, 1997
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
  Applied Physics Letters, 1997
• Biaxial strain dependence of exciton resonance energies in wurtzite GaN
  Journal of Applied Physics, 1997
• Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
  Applied Physics Letters, 1996
• Mg-doped p-type GaN grown by reactive molecular beam epitaxy
  Applied Physics Letters, 1996
• Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
  Journal of Applied Physics, 1996
• Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1995
• Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1995
• Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN
  Physical Review B, 1994
• Temperature dependence of the energy gap in semiconductors
  Physica, 1967