A low dark current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs

1 January 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (1) , 26-27
https://doi.org/10.1109/edl.1986.26280

Abstract

The Double-Schottky-Interdigitated (DSI) photodetector has been shown to be a very-high-speed optical detector for λ < 0.9 µm. Its major drawback, a high dark current (1 µA at 10 V), has been overcome by quasi-ternary growth of the GaAs epitaxial layer, reducing the dark current by three orders of magnitude.

Keywords

DARK CURRENT
BANDWIDTH
PHOTODETECTORS
GALLIUM ARSENIDE
DETECTORS
EPITAXIAL LAYERS
SUBSTRATES
OPTICAL NOISE
ETCHING
DOPING