The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
- 1 January 1969
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 116 (4) , 492
- https://doi.org/10.1149/1.2411917