Resonant cavity light emitting diode with an AlxOy/GaAs reflector
- 5 June 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (23) , 3096-3098
- https://doi.org/10.1063/1.113614
Abstract
A resonant cavity light emitting diode is fabricated which makes use of a Ag mirror/contact and a buried AlxOy/GaAs Bragg reflector. The buried AlxOy is formed by the selective conversion of AlAs. The differential light output efficiency is measured and found to be ∼5.5% when the AlxOy/GaAs reflector is present versus ∼2.5% for a control device without the AlxOy/GaAs mirror. The measured efficiencies are compared with calculations.Keywords
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