High frequency gallium arsenide current mirror
- 11 October 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (21) , 1802-1804
- https://doi.org/10.1049/el:19901154
Abstract
A new negative current mirror using n-channel GaAs MESFETs is proposed. The circuit combines the advantages of linearity and good high frequency performance. Applications are as a general high speed circuit building block and for high frequency amplification.Keywords
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