Reactive Ion Etching of InAs , InSb , and GaSb in CCl2 F 2 / O 2 and C 2 H 6 / H 2

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Abstract
Reactive ion etching (RIE) of , , and in either or discharges has been examined as a function of gas composition, flow rate, pressure, power, and etching time. The chemistry gives smooth, controlled etching of these materials for concentrations less than 40% by volume in , and the etch rates are in the range 280–350Å under these conditions. Subsurface lattice disorder was restricted to ≤50Å in depth for both types of etching. The chemistry led to consistently rougher surface morphologies on all three materials with In droplets visible on . The etch rates with are higher by factors of 2–5 than for , and the etched surfaces all show significant concentrations of Cl‐containing residues.

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