Thermoplastic Deformation of Silicon Wafers

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Abstract
In order to study the problem of warping of silicon wafers during thermal treatment, we subjected stacks of wafers to heating and cooling under various processing parameters. During these processes, the temperatures were measured as a function of time at various locations on a test wafer. These data form the basis for a calculation of the thermoplastic stresses. From a comparison with the temperature‐dependent yield stress, we can decide whether thermoplastic deformation, leading to warpage and increased dislocation density, is to be expected under these specific processing conditions.

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