The use of internal field emission to inject electronic charge carriers into the conduction band of diamond films: a review
- 28 May 1999
- journal article
- review article
- Published by Elsevier in Applied Surface Science
- Vol. 146 (1-4) , 126-133
- https://doi.org/10.1016/s0169-4332(99)00017-3
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin filmsApplied Physics Letters, 1997
- Electron emission from disordered tetrahedral carbonApplied Physics Letters, 1997
- Theoretical analysis of field emission from a metal diamond cold cathode emitterJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Monte Carlo study of hot electron and ballistic transport in diamond: Low electric field regionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Diamond emitters fabrication and theoryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamondNature, 1996
- Polycrystalline Diamond, Boron Nitride and Carbon Nitride Thin Film Cold CathodesMRS Proceedings, 1995
- Derivation of the image interaction for non-planar pointed emitter geometries: application to field emission I–V characteristicsSurface Science, 1991
- Theory of Field Emission from SemiconductorsPhysical Review B, 1962
- Field EmissionPublished by Elsevier ,1956