Epitaxial growth of Al(100) on Si(100) by gas-temperature-controlled chemical vapor deposition

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Abstract
Epitaxial Al(100) film was deposited on Si(100) by low-pressure chemical vapor deposition with the use of tri-isobutylaluminum (TIBA) at the substrate temperature of 380–400 °C with the deposition rate of 400 nm/min. For the epitaxial film growth, it was concluded that preheating the TIBA gas just before the incidence onto the substrate was very important (gas-temperature-controlling). The specular reflectance of the 1-μm-thick aluminum film on silicon substrate was the same level as that of the sputtered film. The x-ray diffraction peak was very narrow and only Al(100) orientation was observed. The transmission electron diffraction (TED) patterns of Al(100) films showed clear spots. Using disilane, we could suppress the diffusion of substrate silicon into the aluminum film.

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