The effect of non-exponential transients on the determination of deep-trap activation energies by deep-level transient spectroscopy
- 28 November 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (22) , 4833-4838
- https://doi.org/10.1088/0022-3719/12/22/024
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Deep traps in ideal n-InP Schottky diodesElectronics Letters, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974