Effects of chromium on the reactive ion etching of steep-walled trenches in silicon

• 1 November 1989
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 7  (6) , 1497-1501
• https://doi.org/10.1116/1.584520

Abstract

Keywords

• SILICON
• REACTIVE ION ETCHING
• STEEP WALLED
• WALLED TRENCHES
• CHROMIUM