Electronic structure of GaP–AlP(100) superlattices
- 1 July 1982
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 21 (2) , 528-530
- https://doi.org/10.1116/1.571753
Abstract
The band structure of GaP–AlP(100) superlattices with unit-cell thickness up to 32 atomic layers is reported. It is found that for the expected range of band-edge discontinuity, the superlattices exhibit a direct-gap behavior—an interesting result given the indirect nature of GaP and AlP. The wave functions associated with the top of the valence band show behavior characteristic of interface states, whereas the wave functions associated with the bottom of the conduction band are characteristic of two-dimensionally confined states.Keywords
This publication has 0 references indexed in Scilit: