Channeling of 20–800-keV arsenic ions in the 〈110〉 and the 〈100〉 directions of silicon, and the roles of electronic and nuclear stopping

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Abstract
Atom- and carrier-depth distributions have been measured for As channeled in the 〈110〉 and the 〈100〉 directions of Si in the energy range from 20 to 800 keV by secondary ion-mass spectrometry and differential C-V techniques. Maximum channeled ranges in the 〈110〉 of Si are observed up to about 6 μm. The slopes p of selected range parameters plotted versus ion energy E1 are measured and used to discuss the relative roles of electronic and nuclear stopping for the channeled and random components of the depth distributions. Values of electronic stopping Se or total stopping (electronic plus nuclear) St are calculated for ion velocity v1 = 1.5×108 cm/s and values are given for k and p in the expression Se,t = kEp1 for the energy range studied. The values of p for the maximum ranges of As channeled in the 〈110〉 and 〈100〉 directions of Si are 0.50±0.03 and 0.54±0.04, respectively. The corresponding values of Se are 5.43×10−14 and 2.18×10−13 eV cm2/atom, respectively, at v1 = 1.5×108 cm/s.

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