THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS
- 1 January 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (1) , 21-23
- https://doi.org/10.1063/1.1652641
Abstract
The tunneling behavior of Schottky barriers has been investigated by several authors. The I‐V characteristics exhibit an exponential form in the forward direction which can be used to determine the energy vs complex momentum dispersion relation for charge carriers in the forbidden gap. In this paper we show that under proper conditions the presence of traps can increase the tunneling probability and result in a reduction in the slope of the log I vs V characteristic by a factor of 2.Keywords
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