Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer
- 15 March 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 1, No) , 1253-1258
- https://doi.org/10.1143/jjap.41.1253
Abstract
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