Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And Experiment
- 28 July 1981
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 128-135
- https://doi.org/10.1117/12.931883
Abstract
Linewidth control using a tri-level resist system on wafers with topology is investigated. An absorbing dye is incorporated in the bottom layer to improve the usable resolution. Resist patterns of 1 μm and 0.75 μm over underlying geometries are demonstrated using a projection aligner. The advantages of a multilevel system are investigated using an exposure and development simulation program for optical lithography. The relative contributions of planarization and reflection suppression are discussed.Keywords
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