Fully ion-implanted GaAs ICs using normally-off JFETs
- 20 August 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (17) , 621-623
- https://doi.org/10.1049/el:19810436
Abstract
Fully ion-implanted normally-off-type JFET GaAs ICs were fabricated by selective ion implantation of Si directly onto a Cr-doped semi-insulating substrate for an n-active region and Zn for a p+-gate region with subsequent capless annealing in AsH3 ambient. A 15-stage ring oscillator, consisting of the DCFL logic gate with resistive load, exhibited a propagation delay time of 85 ps/gate with a power delay product of 34 fJ.Keywords
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