Abstract: Study of semiconductor surfaces using an atom-probe field ion microscope (1) Hydrogen chemisorption on silicon

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Abstract
Semiconductors, particularly silicon, are some of the most important materials in technology today. Surface properties of Si have been intensively investigated by many techniques, such as low-energy electron diffraction (LEED)1,2 and ultraviolet photoemission spectroscopy (UPS).3,4 Most recently Sakurai and Hagstrum have studied surface electronic structures for hydrogen chemisorption on various silicon surfaces using ion neutralization spectroscopy (INS) and UPS.5 Their study suggested the formation of new hydride surface phases, such as SiH5b and SiH3,5c in addition to a well known monohydride phase SiH.5a However this conclusion was drawn without observation of those surface molecules. Here we present a new approach to the study of hydrogen chemisorption on Si surfaces. We applied atom-probe field ion microscopy to observe directly these surface compounds. We have also succeeded in achieving a new atomic resolution of silicon in field ion microscopy.

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