Optimization of series resistance in sub-0.2 μm SOI MOSFETs
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Self-aligned silicide technology for ultra-thin SIMOX MOSFETsIEEE Transactions on Electron Devices, 1992
- Sub-quarter-micrometer CMOS on ultrathin (400 AA) SOIIEEE Electron Device Letters, 1992
- Ultra-shallow junction formation using silicide as a diffusion source and low thermal budgetIEEE Transactions on Electron Devices, 1992
- Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materialsJournal of Applied Physics, 1991
- The impact of intrinsic series resistance on MOSFET scalingIEEE Transactions on Electron Devices, 1987