Measurement of the high-field drift velocity of electrons in inversion layers on silicon

1 July 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (7) , 171-173
https://doi.org/10.1109/EDL.1981.25387

Abstract

A new technique is described for the study of high-field transport along semiconductor interfaces. The technique involves observation of the time-of-flight of a packet of carriers across a region of uniform tangential electric field at the semiconductor surface. We use the technique to measure the drift velocity of electrons along the Si-SiO2interface for tangential fields in the range 2.5-4.0 kV/cm. Drift velocities as high as 8.5 × 106cm/s are observed; these values are almost 40% higher than previously reported in the literature.

Keywords

VELOCITY MEASUREMENT
ELECTRON MOBILITY
CHARGE CARRIER PROCESSES
SILICON COMPOUNDS
MOSFETS
ELECTRIC VARIABLES MEASUREMENT
ELECTRODES
FORCE MEASUREMENT
NOISE MEASUREMENT
SURFACE RESISTANCE

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