Comparison of light emission from stain-etch and anodic-etch silicon films
- 14 December 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (24) , 2896-2898
- https://doi.org/10.1063/1.108041
Abstract
Bright visible photoluminescence (PL) has been measured in stain-etch silicon films prepared by chemical etching in a dilute hydrofluoric and nitric acid solution. The PL emission is observed to degrade exponentially when the stain-etch films are illuminated in air (intensity decreases by 1/e over 22.45 min). Anodic-etch silicon films, prepared using a novel electrochemical cell, show similar strong visible PL but a degradation rate an order of magnitude smaller. The wavelength of the PL peak for anodic-etch silicon (650–710 nm) shifts toward the blue with decreasing electrolyte HF concentration while the PL peak position of stain-etch silicon (∼650 nm) does not vary with process conditions investigated.Keywords
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