MOVPE growth of short-period superlattices of AlP-GaP and its application for light-emitting diodes
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 772-776
- https://doi.org/10.1016/0022-0248(92)90550-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Short-Period Superlattices of (GaP)n(AlP)n Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1991
- Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlatticesApplied Physics Letters, 1991
- Relativistic band structure of Si, Ge, and GeSi: Inversion-asymmetry effectsPhysical Review B, 1990
- Optical properties and indirect-to-direct transition of GaP/AlP (001) superlatticesPhysical Review B, 1988
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974