Fine structure of EL2 defect absorption in GaAs
- 19 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2558-2559
- https://doi.org/10.1063/1.100207
Abstract
High-resolution measurements of the zero phonon line (ZPL) of the EL2 intracenter absorption were performed. Several samples, both Czochralski and Bridgman grown, have been examined. The shape and position of the ZPL were virtually identical for all the samples. No splitting of the ZPL was detected.Keywords
This publication has 4 references indexed in Scilit:
- Resolved structure in the quenching band of the EL2 center in GaAs, studied by infrared spectroscopyApplied Physics Letters, 1987
- Infrared-absorption properties ofEL2 in GaAsPhysical Review B, 1987
- Fourier-transform infrared-absorption studies of intracenter transitions in theEL2level in semi-insulating bulk GaAs grown with the liquid-encapsulated Czochralski techniquePhysical Review B, 1987
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983