Photoinduced Tellurium Precipitation in CdTe
- 1 June 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (6B) , L1083
- https://doi.org/10.1143/jjap.30.l1083
Abstract
Tellurium precipitation in CdTe is found to be induced by photoirradiation with energy higher than the energy gap at 240 W/cm2. It is suggested that this photoinduced precipitation is related with the strong electron-phonon interactions, possibly self-trapped excitons. This irreducible tellurium precipitation may cause a serious problem for the life of semiconductor devices.Keywords
This publication has 6 references indexed in Scilit:
- Anticorrelation between yields of recombination luminescence and recombination-induced defect formation in alkali-metal halidesPhysical Review B, 1986
- Off-centre equilibrium configuration of the self-trapped exciton in alkali chloridesJournal of Physics C: Solid State Physics, 1985
- Raman scattering study of the properties and removal of excess Te on CdTe surfacesApplied Physics Letters, 1984
- Characterization of Te precipitates in CdTe crystalsApplied Physics Letters, 1983
- ENDOR of the self-trapped exciton in KClJournal of Physics C: Solid State Physics, 1978
- Lattice dynamics of cadmium telluridePhysical Review B, 1974