Solid‐Phase Ohmic Contact to p ‐ GaAs with W and W‐N Diffusion Barriers
- 1 July 1987
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 134 (7) , 1755-1758
- https://doi.org/10.1149/1.2100752
Abstract
Contacts to p‐type formed by and systems were investigated. Ohmic contacts in these systems were formed by a solid‐phase reaction between Pt and . Backscattering spectrometry, scanning electron microscopy, energy dispersive x‐ray analysis, and contact resistivity measurements showed that the interposed W or W‐N layers act as excellent diffusion barriers both in confining the reaction between Pt and and in preventing the intermixing of the top Ag layer with Pt or . The contact resistivities of these metallization systems are 5E‐4 Ωcm2 after annealing at 550°C for 30 min, and remain fairly stable up to 5h of annealing at the same temperature.Keywords
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