Germanium nanowire transistors with ethylene glycol treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) contacts

Abstract
Germaniumnanowires(Ge NWs) were synthesized via the supercritical fluid-liquid-solid (SFLS) process, followed by surface passivation with isoprene. The Ge NWs were then drop cast from ethanol suspension onto Si O 2 ∕ Si substrates. Conductivity-enhanced poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) with ethylene glycol treatment was employed as the source-drain electrodes. The field-effect mobility of Genanowirefield-effect transistors was as high as 7.0 cm 2 ∕ V s , with a p -type response similar to Pt-electrode devices previously reported for SFLS-grown Ge NWs. The organic based contacts provide a potential platform for inexpensive production of flexible nanowiredevices.