Diffused junction p+−n solar cells in bulk GaAs—I: Fabrication and cell performance
- 29 February 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (2) , 121-125
- https://doi.org/10.1016/0038-1101(84)90102-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Diffused junction p+−n solar cells in bulk GaAs—II: Device characterization and modellingSolid-State Electronics, 1984
- An Open‐Tube Method for Diffusion of Zinc into GaAsJournal of the Electrochemical Society, 1982
- High-purity semi-insulating GaAs material for monolithic microwave integrated circuitsIEEE Transactions on Electron Devices, 1981
- Hole Diffusion Lengths in VPE GaAs and GaAs0.6 P 0.4 Treated with Transition MetalsJournal of the Electrochemical Society, 1979