Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)
- 1 June 1997
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemical Reviews
- Vol. 97 (4) , 1045-1062
- https://doi.org/10.1021/cr9600722
Abstract
No abstract availableThis publication has 82 references indexed in Scilit:
- Researchers Vie to Achieve a Quantum-Dot LaserPhysics Today, 1996
- Silicon-germanium heterostructures ? advanced materials and devices for silicon technologyJournal of Materials Science: Materials in Electronics, 1995
- An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin FilmsJapanese Journal of Applied Physics, 1993
- Anisotropy in surface migration of Si and Ge on Si(001)Surface Science, 1991
- Scanning tunneling microscopy studies of the growth process of Ge on Si(001)Journal of Crystal Growth, 1991
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Si(001) Dimer Structure Observed with Scanning Tunneling MicroscopyPhysical Review Letters, 1985
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Crystal Interfaces. Part I. Semi-Infinite CrystalsJournal of Applied Physics, 1963
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959