Wide temperature range operation of micrometer-scale silicon electro-optic modulators

Abstract
We demonstrate high bit rate electro-optic modulation in a resonant micrometer-scale silicon modulator over an ambient temperature range of 15K. We show that low bit error rates can be achieved by varying the bias current through the device to thermally counteract the ambient temperature changes. Robustness in the presence of thermal variations can enable a wide variety of applications for dense on chip electronic photonic integration.
Funding Information
  • Defense Advanced Research Projects Agency (W911NF-06-1-0057)
  • National Science Foundation (0446571 0347649)
  • Applied Research Laboratories (W911NF-07-1-0652)
  • NSF (ECS-0335765)