A change of etch rate associated with the amorphous to crystalline transition in CVD layers of silicon
- 1 October 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (10) , 873-874
- https://doi.org/10.1016/0038-1101(77)90177-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2SubstratesJapanese Journal of Applied Physics, 1975
- Vacuum Deposited Silicon Devices on Fused Silica SubstratesJournal of the Electrochemical Society, 1974
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- Microstructural Analysis of Evaporated and Pyrolytic Silicon Thin FilmsJournal of the Electrochemical Society, 1973
- The crystallization of amorphous silicon filmsJournal of Non-Crystalline Solids, 1972