Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion

1 January 1987

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1987.191507

Abstract

We show for the first time that the reoxidation step after the gate patterning strongly affects the transistor short channel behavior. This particular oxidation induces a laterally non-uniform channel profile. From the comparison of simulation and experimental transistor data an effective interstitial decay length Liis extracted, determining the extent of local OED effects. We find Li=1.4µm for dry oxidation at 900°C.

Keywords

IMPLANTS
OXIDATION
MOSFET CIRCUITS
THRESHOLD VOLTAGE
RESEARCH AND DEVELOPMENT
MICROELECTRONICS
DATA MINING
ETCHING
DOPING PROFILES
FABRICATION

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