Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells
- 15 April 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (15) , 10246-10250
- https://doi.org/10.1103/physrevb.59.10246
Abstract
The 2-K recombination dynamics of coupled GaN-AlGaN multiple quantum wells reveals a composite nature in terms of the joint contributions of short-lived direct excitons and long-lived oblique ones. The possibility to observe these oblique excitons, which produce a unusual blueshift of the photoluminescence at long decay times is found to be in straightforward correlation with the presence of internal electric fields together with the existence of a slight disorder at the monolayer scale.Keywords
This publication has 14 references indexed in Scilit:
- GaN/Al x Ga 1−x N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scaleApplied Physics Letters, 1998
- Macroscopic polarization and band offsets at nitride heterojunctionsPhysical Review B, 1998
- Recombination dynamics of free and localized excitons in quantum wellsPhysical Review B, 1998
- -center formation in wurtzite and zinc-blendePhysical Review B, 1998
- III–V nitrides: wurtzite symmetry and optical absorptionMaterials Science and Engineering: B, 1997
- Optical and magneto-optical characterization of heteroepitaxial gallium nitrideMaterials Science and Engineering: B, 1997
- Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphireMaterials Science and Engineering: B, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997
- Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxyMRS Internet Journal of Nitride Semiconductor Research, 1996
- Dramatic photoinduction of hole tunneling in double quantum wells with built-in piezoelectric fieldsPhysical Review Letters, 1993