Buried-channel GaAs MESFET's on MBE material: Scattering parameters and intermodulation signal distortion
- 1 May 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (5) , 811-813
- https://doi.org/10.1109/T-ED.1982.20782
Abstract
Buried-channel GaAs MESFET's (BFET's) on MBE material have been fabricated. The bias dependence of the scattering parameters is strongly reduced applying the BFET principle. As a result the third-order intermodulation products are the smallest reported thus far,-45 dBm at an input power level of 8 dBm. These data are compared with those of VPE fabricated devices. The technology as well as the fabrication of the MBE layers is described.Keywords
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