A double-line image of a dislocation in a silicon single crystal observed by X-ray plane wave topography

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Abstract
Using an asymmetric Bragg reflection, dislocation images in a silicon crystal were taken by X-ray plane wave topography with(+, −) setting. For the Si 220 reflection by Mo Kα1 radiation, the angular width of the plane wave is 0.3″. A dislocation which gives a double-line imago on a plane wave topograph was investigated. From computer simulations based on the dynamical theory of X-ray diffraction, the crystal thickness, the Burgers vector and the depth of the dislocation in the crystal were determined.