Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 1463-1466
• https://doi.org/10.4028/www.scientific.net/msf.338-342.1463

Abstract

Keywords

• BUFFER LAYER
• EPITAXY
• PL SPECTRA
• TEM IMAGES
• THREADING DISLOCATION
• X-RAY DIFFRACTION (XRD)