Frequency dependence of the Drude relaxation time in metal films

Abstract
A two-carrier model is used to explain the frequency dependence of the Drude relaxation time that has been observed in recent experiments on gold films. One carrier is the electrons that exist in the crystallites, regions of high order; the other is the electrons in grain boundaries, regions of low order. This model gives the same dependence on the annealing of the sample as has been seen in the data of Thèye.