Ultralow-threshold (0.56 mA) 1.35-μm InGaAsP/InP compressive-strained-MQW lasers
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-/spl mu/m InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers.Keywords
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