Vanadium-substitution effect on the first-order magnetic and electrical transition in NiS
- 1 October 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6270-6272
- https://doi.org/10.1063/1.328570
Abstract
The cell volume ν of the NiAs-type Ni1−xVxS increases with increasing x below the solubility limit xL = 0.076±0.003. The following results of the V substitution are discussed on the basis of the strongly perturbed dilute-alloy model which is modified to the splitting eg -band diagram for NiS. (1) The transition temperature Tt and the heat-of-transition decrease with increasing x in the high x region below xL. This behavior is in contrast with the volume effect (∂Tt/∂ν ≳ 0) deduced from the previous pressure experiment. (2) The susceptibility at 300 K ( ≳ Tt) is enhanced with increasing x. (3) Below Tt, dominant carriers are holes in the sample with x = 0.02, while they are electrons in x = 0.05.This publication has 5 references indexed in Scilit:
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