Transmission electron microscopy observations of low-load indents in GaAs
- 1 October 1999
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 79 (10) , 805-812
- https://doi.org/10.1080/095008399176625
Abstract
Nanoindentations have been made on (001) surfaces of GaAs single crystals at room temperature and the indents observed by transmission electron microscopy. The permanent deformation, generated by a Berkovitch indentor submitted to maximum loads ranging between 600 to 1700 muN, was analysed and interpreted as a function of the loading curves. The plastic zone size was measured as a function of the maximum load to determine the yield strength of GaAs at room temperature. Finally, the fine structure of the dislocations generated by the indenter has been analysed and this is compared with previously reported structures for higher indenting loads.Keywords
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