Comment on ‘‘Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon’’
- 2 November 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (18) , 2115
- https://doi.org/10.1103/physrevlett.59.2115
Abstract
A Comment on the Letter by N. M. Johnson, C. Herring, and D. J. Chadi, Phys. Rev. Lett. 56, 769 (1986).Keywords
This publication has 6 references indexed in Scilit:
- Johnson, Herring, and Chadi replyPhysical Review Letters, 1987
- Effect of hydrogen on shallow dopants in crystalline siliconApplied Physics Letters, 1987
- Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal siliconPhysical Review Letters, 1986
- Electric field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal siliconApplied Physics Letters, 1985
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983
- Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized siliconJournal of Applied Physics, 1983