The GaAs(110)-oxygen interaction: A LEED analysis. II
- 2 April 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 94 (2-3) , 547-554
- https://doi.org/10.1016/0039-6028(80)90025-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The structure, chemistry, and spectroscopy of the surfaces of tetrahedrally coordinated semiconductorsCritical Reviews in Solid State and Materials Sciences, 1979
- Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysisSurface Science, 1979
- Surface and near‐surface atomic structure of GaAs (110)Journal of Vacuum Science and Technology, 1978
- Evidence for subsurface atomic displacements of the GaAs(110) surface from LEED/CMTA analysisSurface Science, 1978
- Some thoughts on the existence of empty surface states and the effect of surface order on sorptionJournal of Vacuum Science and Technology, 1977
- Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductorsJournal of Vacuum Science and Technology, 1976
- Determination of the Oxygen Binding Site on GaAs(110) Using Soft-X-Ray-Photoemission SpectroscopyPhysical Review Letters, 1975