The Retarded Diffusion of Arsenic in Silicon by Thermal Oxidation in Extrinsic Conditions

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Abstract
Arsenic diffusion in extrinsic conditions in silicon is investigated with different temperatures (950°–1100°C) and times under both oxidizing and inert atmospheres. Arsenic is prediffused into a silicon substrate from arsenic‐silica film and is then subjected to a drive‐in under oxidizing (dry ) and inert (dry ) atmospheres. The diffusion coefficient of arsenic is expressed by a third‐order polynomial equation of arsenic concentration. This functional form is determined by fitting the arsenic concentration profile, which is calculated numerically from the diffusion equation with the functional form of diffusion coefficient assumed appropriately, to the concentration profile measured after drive‐in. The diffusion coefficient is smaller under oxidizing atmosphere than under inert atmosphere at 1000°–1100°C. The degree of retarded diffusion decreases with the increase of diffusion time.
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