Piezoelectric doping in AlInGaN/GaN heterostructures

This publication has 9 references indexed in Scilit:

• Electron mobility in modulation-doped AlGaN–GaN heterostructures
  Applied Physics Letters, 1999
• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  MRS Internet Journal of Nitride Semiconductor Research, 1999
• Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors
  Applied Physics Letters, 1998
• Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors
  Applied Physics Letters, 1998
• Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
  Applied Physics Letters, 1997
• Spontaneous polarization and piezoelectric constants of III-V nitrides
  Physical Review B, 1997
• Piezoelectric charge densities in AlGaN/GaN HFETs
  Electronics Letters, 1997
• Pyroelectricity in gallium nitride thin films
  Applied Physics Letters, 1996
• The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure
  Journal of Applied Physics, 1993